PART |
Description |
Maker |
DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DN500F |
NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
DN050 |
Extremely low collector-to-emitter saturation voltage Suitable for low voltage large current drivers
|
KODENSHI KOREA CORP.
|
PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET From old datasheet system mTrenchMOS extremely low level FET
|
Philips
|
GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD GTM CORPORATION
|
2SD874A |
Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET UTrenchMOS extremely low level FET From old datasheet system
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
2SC5026 |
Silicon NPN Epitaxial Planar Type Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor TY Semiconductor Co., Ltd
|
ASM3P2872A ASM3P2872AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution From old datasheet system The el-EMI-nator? Series for Low-Power
|
Alliance Semiconductor ALSC
|
PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|